RD50 Collaboration

The RD50 Collaboration is a community born at CERN in 2002 with the mandate to develop and characterize radiation-hard silicon sensors for future colliders. It currently includes more than 60 institutes and 300 members from all the world, devoted to four main R&D areas: (i) defect and material characterization, (ii) detector characterization, to which I contribute through the device modeling, (iii) design of new structures, where I’m involved with the RSD activities, and (iv) production of full detector systems. Go to the RD50 activity page.

RSD

“Resistive AC-Coupled Silicon Detectors” (RSD), are a novel approach to the design of Low-Gain Avalanche Detectors (LGAD) that will eliminate the problem arising from the segmentation of the gain layer. RSD are essentially LGAD designed to reach the limit of 100% in the fill-factor. Such scheme is based on thepresence of a resistive n-electrode, necessary to store the charges for an opportune discharging time, and a top layer, acting as a capacitive layer for the signal readout. Since the AC-coupling does not need for the segmentation of active areas, RSD will completely eliminate the dead space between pixels, i.e. the no-gain region used in the present technology for the insulation between neighboring sensors. This improvement will be beneficial in most of particle physics applications, especially in high-luminosity environments, where 4D tracking needs for the most uniform response, in terms of both geometrical acceptanceand detection efficiency. The project is in collaboration with FBK (Fondazione Bruno Kessler), Trento. The leading institution is INFN Torino and the PI is Dr. Marco Mandurrino. Go to the RSD project page.

UFSD

The final goal of the UFSD project is to develop a finely segmented silicon sensor able to reach resolutions of ∼10 picoseconds and ∼20-30 microns. To this aim, an extra doping layer – allowing a controlled charge multiplication – is implanted. The project is in collaboration with FBK (Fondazione Bruno Kessler), Trento. The leading institution is INFN Torino. Numerical simulations of the productions UFSD2, UFSD3, UFSD3.1, UFSD3.2 and UFSD4 – from 2017 to present – and layout design of lithographic masks for batch no.3. These results allowed to determine the technological parameters implemented by FBK, Trento, in the related productions. Moreover, here are included all the phisics-based studies about the optimization of UFSD detectors by the standpoint of radiation hardness, charge multiplication, inter-pixel isolation, breakdown voltage, time resolution and gain implantation. Go to the UFSD activity page.